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| SEMiX 653GB176HD ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R) 3 Trench IGBT Modules SEMiX 653GB176HD SEMiX 653GAL176HD SEMiX 653GAR176HD Preliminary Data Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse diode Remarks Thermal characteristics Temperature sensor Mechanical data GB GAL GAR 1 18-04-2006 GES (c) by SEMIKRON SEMiX 653GB176HD ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 18-04-2006 GES (c) by SEMIKRON SEMiX 653GB176HD ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 Typ. CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 18-04-2006 GES (c) by SEMIKRON SEMiX 653GB176HD ... Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 18-04-2006 GES (c) by SEMIKRON |
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